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In this study, both the dielectric and ferroelectric properties were systematically studied with temperature and composition engineering. Pb (1−3x/2) La x
Especially, the Al-doped HfZrO 2 thin film with anti-ferroelectricity has excellent energy storage density and efficiency compared to a pure ZrO 2 thin film. Therefore, the Al-doped HfZrO 2 thin films with improved anti-ferroelectric properties and suppressed ferroelectricity by Al doping can be used as a promising candidate for next
The optical evaluation revealed a small energy band gap, low transmittance, and high absorbance for the 375 C CuO thin films. 33% response performance and 160 s response time of the thin film were observed in acetone with a recovery time of 360 s.
Thin film science and technology plays an important role in the development of devices in the future ranging from energy-efficient display devices to energy-harvesting and storage devices such as solar cell, fuel cell,
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Emphases are placed on the relationship between multiscale structures and energy storage properties and the rational structure design principles in dielectric ceramics. Also included are currently available multilayer ceramic capacitors based on multiscale engineered ceramic structures.
This review discusses the basic concepts and working principles of four major transfer printing methods associated with (1) transfer by sacrificial layers, (2)Transfer by porous Si layer, (3) transferby controlled crack, and (4) transferBy water-assisted thin film delamination. Fabricating thin film solar cells (TFSCs) on flexible substrates will not
Get the Latest on Panasonic Trends. A smart solar investment will provide your family with clean power and energy savings for 25 years or more. Working closely with your local
Herein, the hydrogenated amorphous silicon (a-Si:H) thin film electrodes are prepared by radio frequency sputtering followed by ex-situ hydrogenation. The electrochemical properties of a-Si:H electrodes are tested experimentally, and the electrochemical hydrogen storage behaviors of a-Si:H electrodes are analyzed by first-principles calculations.
Thin films of nanocomposite materials arouse a lot of interest due to their excellent mechanical, electrical, optical, tribological properties and also by the vast field of application. This chapter covers
The majority of thin film techniques for energy storage devices are based on semiconductor or micro-electro-mechanical-system (MEMS) processes. Thin film depositions are typically performed in vacuum, with a few exceptions such as spin coating, electroplating, and so on, and can be classified as physical or chemical vapor deposition
Upon rational architectural design, MXene-based films (MBFs) have aroused intense interest for broadening their applications in the energy storage and molecular/ionic separation fields [35], [36]. For instance, the high chemical and mechanical stability, and the excellent electrical/ionic conductivity of MXenes enable the construction
Dielectric materials with high energy-storage density and efficiency have great potential applications in modern electric and electronic devices. In this work, a series of 0.9(0.94Bi 0.5 Na 0.5 TiO 3-0.06BaTiO 3)-0.1NaNbO 3 (BNT-BT-NN) ferroelectric thin films were deposited on LaNiO 3 (LNO) bottom electrodes by radio-frequency (RF) magnetron
However, due to materials limitations and their preparation requirements, there are significant challenges which limit the use of current dielectrics in high-energy storage capacitors. In addition material limitations such as, low dielectric permittivity, low breakdown strength, and high hysteresis loss decrease these materials'' energy density and
In recent years, there has been significant research interest in flexible supercapacitors as energy storage devices for enhancing wearable and portable electronics. This is due to their lightweight nature, high power density, excellent cyclic
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Furthermore, the BNBT/2BFO thin film capacitor exhibited superior energy storage properties with a recoverable energy density of 31.96 J/cm3 and an energy conversion efficiency of 61% under an
It is also shown that by making several improvements in materials and processing methods, MTS devices can be used as thin film energy harvesters in chip-based IoT sensors. The second section of
Among them, AgNbO 3 -based ceramics present excellent energy storage performance and have achieved great improvement recently. In 2016, the energy-storage performance of the pristine AgNbO 3 ceramics with a Wrec of 2.1 J/cm 3 was firstly reported [ 15 ]. In 2017, a high Wrec up to 4.2 J/cm 3 was achieved in Ag (Nb,Ta)O 3 ceramic [ 16 ].
A spin coater, or simply spinner, is an apparatus being used in spin coating technique. Whereas the fluid spins off the ends of the surface, the spinning continues till the optimum film thickness is obtained. The solvent is generally volatile and evaporates at
About this book. This book provides a comprehensive overview of thin film structures in energy applications. Each chapter contains both fundamentals principles for each thin film structure as well as the relevant energy application technologies. The authors cover thin films for a variety of energy sectors including inorganic and organic solar
Here we present an overview of the recent progress in the engineering of multiscale structures of dielectric ceramics ranging from bulk to thin films. This article commences with a brief introduction of the fundamentals of dielectric ceramics, including primary parameters, a library of dielectric ceramics, and multiscale structures.
The maximum discharge capacity of a-Si:H thin film electrode after hydrogenation increases from initial 180 mAh·g−1to 1827 mAh·g−1, which is over tenfold that of as-deposited hydrogen-less a
Emerging energy storage electrodes synthesized with controlled morphology are of great importance to enhance supercapacitor properties including specific capacitance (SC). In this study, polycrystalline orthorhombic alpha-molybdenum trioxide (α-MoO 3) thin films of different morphologies are deposited over a fluorine-tin oxide (FTO) 3D conducting
Amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors have been successfully commercialized in the flat panel display industry. The next significant challenge in oxide
Deposition of thin films of semiconductor is carried out using low cost methods (compared to Si processing). These results in savings in material and energy consumption and therefore the energy payback time
Evaporation of a material and its subsequent condensation on a substrate is one of the simplest processes for thin film deposition. In this method, the material to be deposited is in the form of a solid or a liquid phase and requires thermal energy for transformation into the vapor phase. Thus, evaporation includes sublimation when a solid
Zou et al. [73] prepared a micro-PCM film with energy storage and thermal buffering capacity using TiO 2 as a shell wrapped with PA. They applied the film to the doll and irradiated it with 150 mw/cm 2 light for 180 s.
Puli, V. S. et al. Observation of large enhanced in energy-storage properties of lead-free polycrystalline 0.5BaZr 0.2 Ti 0.8 O 3 –0.5Ba 0.7 Ca 0.3 TiO 3 ferroelectric thin films. J. Phys.
We present an investigation into the pseudo-capacitive energy storage potential of silver (Ag) and silver oxide (Ag2O) thin film electrode materials prepared by reactive magnetron sputtering
With the continuous development of energy storage technology, dielectric capacitors are very attractive for pulse discharge and power regulation applications in electronic systems due to their
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