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Wang, X. et al. Enhanced energy-storage performance of an all-inorganic, antiferroelectric, thin-film via orientation adjustments. IEEE Access 8, 217246–217254 (2020). Article Google Scholar
Antiferroelectric materials, which exhibit high saturation polarization intensity with small residual polarization intensity, are considered as the most promising dielectric energy storage materials. The energy storage properties of ceramics are known to be highly dependent on the annealing atmosphere employed in their preparation. In
Most strikingly, the typical double P–E hysteresis loops afford an ultrahigh storage efficiency up to ∼91% at low critical electric fields (E cr = 41 kV cm −1); this E cr value is much lower than those of state-of-the-art AFE oxides, revealing the potential of 1 for miniaturized energy-storage devices. In terms of the energy storage
Research and development in the direction of waste thermal energy harvesting can contribute to more sustainable and efficient energy utilization [].Hence, in recent years waste thermal/heat recovery or reuse has attracted considerable interest [2, 3].According to the second law of thermodynamics, the waste thermal energy is an
The (001)AgNbO3 epitaxial film reveals typical antiferroelectric hysteresis loops when the applied electric fields are over 300kV/cm. A recoverable energy density of 5.8J/cm³ and an energy
Especially in energy storage applications, antiferroelectric capacitor can store a large amount of recoverable energy owing to its high saturation polarization and small remnant polarization [5]. Meanwhile, their unique electric field induced switching between antiferroelectric (AFE) and ferroelectric (FE) states subjected to fast charge
We show that the energy-storage density of the antiferroelectric compositions can be increased by an order of magnitude, while increasing the chemical
Antiferroelectric materials have shown potential applications in energy storage. However, controlling and improving the energy-storage performance in antiferroelectric remain challenging. Here, a domain structure and energy-storage performance diagram for Pb(Zr1–xTix)O3 (x ≤ 0.1) single crystal are investigated via
Antiferroelectric materials have attracted growing attention for their potential applications in high energy storage capacitors, digital displacement
2 · Antiferroelectric (AFE) ceramics with near-zero remanent polarization originating from unique electric field-induced antiferroelectric-ferroelectric phase transition are of
Antiferroelectric phenomenological theory can well depict the behavior of the antiferroelectric system, but how to quantitatively define the antiferroelectric o In addition, the enhancement of energy storage density of Ta-doped silver niobate is discussed using this reduced antiferroelectric order parameter as a tool.
There are two kinds of antiferroelectric states: orthorhombic antiferroelectric phase (AFE O) Thereby, it can be expected that the energy storage properties should also be strongly dependent on the compositions and it will be of great significance to establish the composition-energy storage properties relationship of this
Cai et al. found that La-doped antiferroelectric films showed high energy storage, high efficiency and good cycling stability . By replacing Pb 2+ with La 3+ at A site, the long-range arrangement of the ferroelectric phase in PZT could be broken and the stable region of antiferroelectric phase in zirconium rich region could be expanded.
An important observation is that increasing the Hf 4+ content in PLHST ceramics can effectively reduce the antiferroelectric to ferroelectric phase transition electric field, resulting in a significant increase in maximum polarization (P max) and consequently leading to higher energy storage density.
Molecular antiferroelectrics (AFEs) have taken a booming position in the miniaturization of energy storage devices due to their low critical electric fields.
Reversible field-induced phase transitions define antiferroelectric perovskite oxides and lay the foundation for high-energy storage density materials, required for future green technologies. However, promising new antiferroelectrics are hampered by transition´s irreversibility and low electrical resistivity. Here, we demonstrate an approach
For energy-storage performance, the pulsed discharge current reveals that the stored energy can be released in a quite short time of about 600 ns. The maximum discharge energy density was obtained in the sample with x = 0.04 at 300 kV/cm, which was 3.8 J/cm 3 calculated by the hysteresis loop and 2.7 J/cm 3 by the pulsed discharge
Here, a domain structure and energy-storage performance diagram for Pb (Zr 1-x Ti x )O 3 ( x ≤ 0.1) single crystal are investigated via phase-field simulations. Controlling the ratio of domain wall coefficients λ and g can tune the periodicities of the antiferroelectric stripe domain and generate a complicated topological domain.
Ceramic-based capacitors have attracted great interest due to their large power density and ultrafast charge/discharge time, which are needful properties for pulsed-power devices. Antiferroelectric ceramics normally show ultrahigh energy density and relatively low efficiency, which is ascribed to the electric field-induced
Dielectric capacitors are widely concerned because of high-power density. It is essential to develop lead-free materials with high recoverable energy density (Wrec). Herein, the Ag1–3xEuxNbO3 (AENx) ceramics with x = 0, 0.01, 0.02, and 0.04 were synthesized via a traditional solid-state reaction method. The effects of Eu3+ additions on
AgNbO3 lead-free antiferroelectric (AFE) ceramics are attractive candidates for energy storage applications and power electronic systems. In this study, AgNbO3 ceramics are synthesized by single-step sintering (SSS) and two-step sintering (TSS) processes under oxygen-free atmosphere, and their energy storage performance
Energy storage density (ESD) values are regularly assessed for AFE and AFE-like, FE, and dielectric (DE) thin films. The reason for the "AFE-like" nomenclature in this work is the current lack of consensus of the physical origins of the hysteresis "double loop" characteristic of AFEs. 6–10 The most prevalent theory behind the AFE behavior is
The development of antiferroelectric (AFE) materials with high recoverable energy-storage density (Wrec) and energy-storage efficiency (η) is of great importance for meeting the requirements of
The results demonstrate that the acceptor modification is an effective way to improve the energy storage density and efficiency of antiferroelectric ceramics by inducing a structure variation and the (Pb 0.93 Ba 0.04 La 0.02)(Zr 0.65 Sn 0.3 Ti 0.05)O 3-xMn 2 O 3 antiferroelectric ceramics are a promising energy storage material with high
This is our main motivation to choose BNFO to optimize its energy storage capabilities at room temperature.
properties. It should also stimulate the development of novel antiferroelectric ceramics with high energy storage performance. 1. Introduction Due to the insatiable demand for ever smaller and lighter electronic devices, the development of advanced energy storage materials and associated technologies have long been areas of intense
Introduction. Antiferroelectric (AFE) materials serve as the crucial ingredients used for dielectric capacitors, solid-state refrigeration and energy storage devices 1 – 3.The unique characteristic of AFEs is their antiparallel orientation of adjacent dipoles can be reversibly flipped using a sufficiently strong external field, leading to
Antiferroelectric materials are attractive for energy storage applications and are becoming increasingly important for power electronics. Lead-free silver niobate (AgNbO 3) and sodium niobate (NaNbO 3) antiferroelectric ceramics have attracted intensive interest as promising candidates for environmentally friendly energy storage products.This review provides
The enhancement of the energy-storage performance and electrocaloric effect (ECE) was achieved via orientation control. The 1.5-μm-(Pb 0.97 La 0.02)(Zr 0.73 Sn 0.22 Ti 0.05)O 3 (PLZST) antiferroelectric (AFE) thick films with (111), (110), and (100) crystallographic orientations were successfully prepared via a sol-gel
Abstract (1-x)(Pb 0.97 La 0.02)(Zr 0.46 Sn 0.48 Ti 0.06)O 3-xSiO 2 ((1-x)PLZST-xSiO 2, x = 0-0.025) thick film antiferroelectric ceramics were preapred by a traditional solid-state reaction method.The structure and dielectric properties related to the energy storage density in the (1-x)PLZST-xSiO 2 system were investigated in detail.
An ultrahigh recoverable energy density (W rec) of 4.9 J/cm 3 with a high energy storage efficiency (η) of 92.8% are achieved at an electric field of 400 kV/cm. Moreover, the AFE ceramics possess excellent discharge energy storage properties with a high discharge energy density (W d) of 4.4 J/cm 3 and a large power density (P d) of 125
The utilization of AgNbO 3 film in dielectric energy storage poses challenges due to its susceptibility to impurity phase formation, which compromises its antiferroelectric properties and breakdown electric field. In this study, we successfully fabricated an AgNbO 3 film with outstanding antiferroelectric properties and energy
Of particular significance is that an ultrahigh recoverable energy-storage density of 10.4 J cm-3 and a high discharge efficiency of 87% are achieved at 40 kV mm-1 for PLZS ceramic with a thickness of 0.11 mm, sintered at 1175 °C, which are by far the highest values ever reported in bulk ceramics.
Nonetheless, PZT has drawbacks, including high energy loss, large remnant polarization, and poor EBDS, limiting its use in energy-storage devices. To address these challenges, researchers have constructed PZ/PZT multilayers by combining antiferroelectric and ferroelectric materials, aiming to enhance their energy-storage
In recent years, researchers have extensively investigated the exceptional energy storage properties of PLZST-based antiferroelectric materials resulting from electric-field induced phase transitions, but only at the level of the fundamental ceramic materials with sintering temperatures above 1250 °C [[11], [12], [13]].
In this review, the current state‐of‐the‐art as regards antiferroelectric ceramic systems, including PbZrO 3 ‐based, AgNbO 3 ‐based, and (Bi,Na)TiO 3 ‐based
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