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It can be seen that to obtain the ideal energy storage performance, the dielectric material must have the characteristics of high P max and E, low P r and U loss.As research focuses on non-linear dielectric energy storage materials, relaxation ferroelectric and antiferroelectric materials have provided a new avenue for exploring high-performance
We report the energy-storage performance and electric breakdown field of antiferroelectric PbZrO 3 (PZ) and relaxor ferroelectric Pb 0.9 La 0.1 (Zr 0.52 Ti 0.48)O 3 (PLZT) single films, as well as PLZT/PZ and PZ/PLZT heterolayered films grown on SrRuO 3 /Ca 2 Nb 3 O 10 –nanosheet/Si substrates using pulsed laser deposition. These films
Antiferroelectric materials have shown potential applications in energy storage. However, controlling and improving the energy-storage performance in antiferroelectric remain challenging. Here, a domain structure and energy-storage performance diagram for Pb(Zr1–xTix)O3 (x ≤ 0.1) single crystal are investigated via
The energy storage efficiency increases from 56.8% to 74.1%, while a high energy density of ∼20 J/cm 3 is maintained under an electric field of 1200 kV/cm. Additionally, the operating frequencies also have distinct influence on the hysteresis loop shape and the energy storage properties, indicating that energy storage performance
The energy storage properties of antiferroelectric (AFE) Pb 0.96 La 0.04 Zr 0.98 Ti 0.02 O 3 (PLZT 4/98/2) thin films were investigated as a function of temperature and applied electric field. The results indicated that recoverable energy density (U re) and charge-discharge efficiency (η) of PLZT (4/98/2) depend weakly on temperature (from
A huge recoverable energy-storage density of 56 J/cm3 was obtained in antiferroelectric thick films with x = 0.40. Moreover, a good temperature-dependent stability of the energy storage was
Antiferroelectric PbZrO 3 (PZO) thin-films were fabricated by pulsed laser deposition (PLD) and sol-gel techniques to investigate the effect of antiferroelectric-ferroelectric (AFE-FE) phase transition on the energy storage performance. The (100)-oriented PLD thin-films have a square-double polarization-electric field (P-E) hysteresis
The (001)AgNbO3 epitaxial film reveals typical antiferroelectric hysteresis loops when the applied electric fields are over 300kV/cm. A recoverable energy density of 5.8J/cm³ and an energy
The recoverable energy storage density of AFE materials can be calculated by W r e = ∫ P r P m a x E d P (E = applied electric field and P = polarization). As shown in Fig. 1, W re is released when the electric field reduces from E max to zero, represented by the green area (W 1, caused by the linear dielectric response) and the yellow area (W 2,
In this work, antiferroelectric Pb 1-x Ca x ZrO 3 (PCZ) thin films with different concentrations of Ca 2+ were prepared by chemical solution deposition, and the effects of Ca 2+ concentration on the antiferroelectric properties and energy storage performance were investigated. The results show that the optimal Ca 2+ concentration in
Antiferroelectric capacitors hold great promise for high-power energy storage. Here, through a first-principles-based computational approach, authors find high theoretical energy densities in rare
A energy-storage density of 9.84 J cm-3 with a efficiency of 85.2 % at 440 kV cm-1 was obtained in Pb 0.97 La 0.02 (Zr 0.50 Sn 0.50)O 3.. A large negative electrocaloric effect, ∆T max of -9.50 °C at 280 kV cm-1, was observed. An electrocaloric strength (dT/dE) max of 0.98 K/(MV m-1) was procured, which is consistent with the formula proposed by Lu et al.
The enhanced energy storage density of 28.2 J/cm 3 at 2410 kV/cm has been achieved in PbZrO 3 /PbZr 0.52 Ti 0.48 O 3 bilayer film at 20°C, which is higher than that of individual PbZr 0.52 Ti 0.48 O 3 film (15.6 J/cm 3). Meanwhile, the energy storage density and efficiency of PbZrO 3 /PbZr 0.52 Ti 0.48 O 3 bilayer film increase slightly with
In this study, epitaxial antiferroelectric PbHfO 3 films with different orientations are fabricated, in which remarkable anisotropies of polarization and energy
The Pb 1–1.5x La x Zr 0.95 Ti 0.05 O 3 films with different La 3+ contents were successfully prepared on the LaNiO 3 /SiO 2 /Si substrates by sol-gel method. The effect of La 3+ doping on the microstructure, electrical properties, and energy storage performance of the films are systematically investigated. It is found that the introducing
We report on the correlated investigation between crystal structures, field-induced phase transition, and energy storage properties of both polycrystalline and epitaxial antiferroelectric PbZrO 3 (PZO) films grown by pulsed laser deposition on Si and SrTiO 3 substrates. The structural characterization revealed the polycrystalline structure of the
A method to improve charge and energy storage performance of PbZrO 3 (PZO) thin films by α-Fe 2 O 3 nanoparticles (NPs) doping is proposed. The PZO thin films were deposited on Pt(111)/Ti/SiO 2 /Si substrates by a chemical solution deposition method. The effect of α-Fe 2 O 3 NPs doping on structure and electrical properties has been
We demonstrate an approach to enhance the energy storage density W of antiferroelectric film through simple altering a crystallographic orientation of the substrate. We reveal that the antiferroelectric phase stability of PbZrO 3 can be enhanced for the (110) or (111) SrTiO 3 substrate orientation, thus suppresses the
Antiferroelectric materials possess excellent energy storage capacity, fatigue resistance, and high thermal stability.This study successfully prepared PbHf 1-x Sn x O 3 (x = 0.5%, 1.0%, 1.5%, 2.0%, reviated as PHS-100x) antiferroelectric thin films on fluorine-doped tin oxide (FTO)/glass substrates using the sol-gel method. The
A/B-site doping in influencing the antiferroelectricity of PZO has a similar effect in only considering t value, and A-site doping would be better than B-site one in energy storage properties. PBZ films achieve a high W rec of 26.4 J/cm 3 with a η of 56.2 % under an applied electric field of 1278 kV/cm, accompanying a suitable temperature
Antiferroelectric materials represented by PbZrO 3 (PZO) have excellent energy storage performance and are expected to be candidates for dielectric capacitors. It remains a challenge to further enhance the effective energy storage density and efficiency of PZO-based antiferroelectric films through domain engineering.
The values of recoverable energy storage density of 32.6 J/cm 3 and efficiency of 88.1% are obtained for trilayer films annealed at 550 °C, meaning that the design of antiferroelectric-insulator multilayer structure is an effective approach to regulate polarization behaviors and enables the films to have excellent energy storage
The energy-storage performance and piezoelectric properties were determined for epitaxial antiferroelectric (AFE) PbZrO 3 (PZ), ferroelectric (FE) PbZr 0.52 Ti 0.48 O 3 (PZT), and relaxor ferroelectric (RFE) Pb 0.9 La 0.1 Zr 0.52 Ti 0.48 O 3 (PLZT) thin films that were deposited on to SrTiO 3 buffered Si substrates. The films were
1 · The high energy storage performance of a dielectric capacitor strongly depends on factors such as remnant polarization (P r), maximum polarization (P max), and applied electric field (E), which is detailed in our previous works [8].Generally, the dielectric materials used for energy storage devices are linear (LE), paraelectric (PE), ferroelectric (FE),
Flexible antiferroelectric (AFE) Pb 0.94 La 0.04 Zr 0.97 Ti 0.03 O 3 (PLZT) thick-film capacitors were fabricated on nickel foil substrates using sol-gel method.The thick PLZT film shows pure perovskite phase with dense microstructure. The discharge energy-storage properties of the thick PLZT film are directly evaluated by the
The effects of grain size on dielectric properties, energy-storage performance and electrocaloric effect (ECE) of Pb0.85Ba0.05La0.10(Zr0.90Ti0.10)O3 (PBLZT) antiferroelectric thick films were systematically studied. As the grain size was increased, dielectric constant of the thick films was increased, while their critical
Novel PbHfO 3 antiferroelectric films were prepared for the first time. • The 650 C annealed film has high recoverable energy storage density and energy
The PbZrO 3 /PbZr 0.52 Ti 0.48 O 3 bilayer film displayed an enhanced energy storage density of 28.2 J/cm 3 at 2410 kV/cm at 20 °C, surpassing that of the individual PbZr 0.52 Ti 0.48 O 3 film (15.6 J/cm 3). However, while dielectric thin films exhibit a higher dielectric strength compared to their bulk counterparts, the energy
This understanding helps explain why (relaxor) ferroelectrics have reduced electromechanical responses in clamped thin films while antiferroelectric films behave
To reveal the impact of the Al 2 O 3 layer on the energy storage performance of the nanocomposite film, we conducted a comparative study on the
This review focuses on the recent progress of PZ-based anti-ferroelectric films for energy storage, and provides various ways, such as element modification (replacing of one element in the ABO 3 structure by another element), composite materials (adding secondary phase into PZ films to form composite films), and process
Nature Communications - Antiferroelectric capacitors hold great promise for high-power energy storage. Here, through a first-principles-based computational
The enhancement of the energy-storage performance and electrocaloric effect (ECE) was achieved via orientation control. The 1.5-μm-(Pb 0.97 La 0.02)(Zr 0.73 Sn 0.22 Ti 0.05)O 3 (PLZST) antiferroelectric (AFE) thick films with (111), (110), and (100) crystallographic orientations were successfully prepared via a sol-gel
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